Aluminum nitride substrates for hybrid circuits and heat sinks

Aluminum Nitride Substrate Information Links

Key properties of Aluminum Nitride as an insulating substrate for heat sinks and thin and thick film microelectronic applications are: high thermal conductivity, nontoxic, thermal expansion close to that of Silicon and good dielectric properties.

Aluminum Nitride links for technical information, supplier lists, and material properties:

Typical Properties of Aluminum Nitride Substrates

Toxicity Nontoxic
Density 3.3 g/cm³
Hardness (knoop) 11.8 GPa
Moh's Hardness 7 at 20°C
Flexure Strength 290 MPa
Modulus of Elasticity 331 GPa
Poisson's Ratio 0.22
Thermal Conductivity 175 W/mk
Coefficient of Expansion 4.6 x 10E-6 (20 - 400°C)
Maximum Use Temperature 800°C Oxidizing
Dielectric Constant 20°C 8.9 at 1MHz
Dielectric Loss at 1MHz 20°C 0.0001 - 0.001
Resistivity >10E14 ohm-cm

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Updated: 14 June 2012





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