Aluminum Nitride Substrate Information Links
Key properties of Aluminum Nitride as an insulating substrate for heat sinks and thin and thick film microelectronic applications are: high thermal conductivity, nontoxic, thermal expansion close to that of Silicon and good dielectric properties.
Aluminum Nitride links for technical information, supplier lists, and material properties:
- Aluminum Nitride Suppliers, AlN Ceramic substrates
- Ceramic Technical Information Materials information database
- www.valleydesign.com Lapping, polishing and dicing Ceramic substrates
- www.laserslag.com Lasered Aluminum Nitride slag removal
- www.aluminumnitride.com/substrate-mfg Aluminum Nitride substrate tape casting guide
- Thermal Conduction Mechanism of Aluminum Nitride Ceramics
- Aluminum Nitride: Experimental Results
- Efficient Cooling with AlN
- Thick Film Materials for Aluminum Nitride Substrates
- Electrical and Chemical properties of AlN substrates
Typical Properties of Aluminum Nitride Substrates
| Toxicity | Nontoxic |
| Density | 3.3 g/cm³ |
| Hardness (knoop) | 11.8 GPa |
| Moh's Hardness | 7 at 20°C |
| Flexure Strength | 290 MPa |
| Modulus of Elasticity | 331 GPa |
| Poisson's Ratio | 0.22 |
| Thermal Conductivity | 175 W/mk |
| Coefficient of Expansion | 4.6 x 10E-6 (20 - 400°C) |
| Maximum Use Temperature | 800°C Oxidizing |
| Dielectric Constant | 20°C 8.9 at 1MHz |
| Dielectric Loss at 1MHz | 20°C 0.0001 - 0.001 |
| Resistivity | >10E14 ohm-cm |
Updated: 14 June 2012
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